The mutual conversion between alternating current (AC) and direct current (DC) is crucial for the use of electrical devices and serves as necessary protection for them. This requires the use of power conversion devices.
Silicon carbide (SiC) exhibits high breakdown voltage, a wide bandgap, and excellent thermal conductivity. Therefore, SiC semiconductor devices are well-suited for applications in high-power density and high-switching frequency scenarios, with power conversion devices being one of the key applications.